例句與造句

1. Once the device begins to conduct , it is latched on and the gate current can be removed
   一旦器件（晶閘管）導(dǎo)通，門極電流即可去掉。
2. With respect to a bipolar transistor , the condition in which the gate current equals or exceeds the value necessary to provide full emitter collector conduction
   就雙極型晶體管而言,其門電流等于或超過(guò)必要的值,使發(fā)射極集電極充分導(dǎo)通的一種狀態(tài)。
3. The thyristor can be trigged into the on - state by applying a pulse of positive gate current for a short duration provided that the device is in its forward blocking state
   如果是處于正向阻斷狀態(tài)，只要在門極提供一個(gè)短暫的正脈沖，晶閘管就會(huì)導(dǎo)通。
4. The large gate current brings out a lot of questions such as thermal stability , thermal dissipation , lifetime etc , so , it affects the device ' s function and the device ca n ' t work normally
   如此大的柵電流，將會(huì)產(chǎn)生很多嚴(yán)重的問(wèn)題，如熱穩(wěn)定性、散熱、壽命等問(wèn)題，嚴(yán)重地影響著器件性能，使器件不能正常工作，以致限制了集成電路的進(jìn)一步發(fā)展。
5. Since metal - oxide - semiconductor ( mos ) device appeared , integration of integrated circuit ( ic ) expands as moore law . meanwhile the dimension of device scales down , the thickness of sio2 gate dielectric shrinks as the same law . but as the thickness of sio2 gate dielectric reaches at isa , the gate current rises very quickly and reaches at 1 10a / cm2
   自從金屬-氧化物-半導(dǎo)體( mos )器件出現(xiàn)以來(lái)，集成電路的集成度按照摩爾定律增加，相應(yīng)地，器件的物理尺寸按照等比縮小的原則不斷縮小， sio _ 2作為柵介質(zhì)的厚度不斷縮小，特征尺寸在0 . 1 m以下的集成電路要求sio _ 2柵介質(zhì)的厚度小于1 . 7nm 。
6. It's difficult to find gate current in a sentence. 用gate current造句挺難的